Gatemonium: A Voltage-Tunable Fluxonium

We present a new fluxonium qubit design, gatemonium, based on an all superconductor-semiconductor hybrid platform exhibiting gate voltage tunability of $E_J$. We first show the principle of fluxonium operation in epitaxial Al/InAs heterostructure where the single Josephson junction can be controlled...

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Bibliographic Details
Main Authors Strickland, William M, Elfeky, Bassel Heiba, Baker, Lukas, Maiani, Andrea, Lee, Jaewoo, Levy, Ido, Issokson, Jacob, Vrajitoarea, Andrei, Shabani, Javad
Format Journal Article
LanguageEnglish
Published 13.06.2024
Subjects
Physics - Mesoscale and Nanoscale Physics
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Summary:We present a new fluxonium qubit design, gatemonium, based on an all superconductor-semiconductor hybrid platform exhibiting gate voltage tunability of $E_J$. We first show the principle of fluxonium operation in epitaxial Al/InAs heterostructure where the single Josephson junction can be controlled using gate voltage control, effectively tuning the "weight" of the fictitious phase particle. The spectroscopy of the qubit shows tunability between plasmons to fluxons and their hybrid spectrum. We study two gatemonium devices with different charging energies and extract inductance of InAs-based Josephson junctions array. We also discuss future directions implementing a gate voltage tunable superinductance.
DOI:10.48550/arxiv.2406.09002