Mobility and Threshold Voltage Extraction in Transistors with Gate-Voltage-Dependent Contact Resistance
The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate modulate the contact resistance during measurements, which ca...
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Main Authors | , , , , |
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Format | Journal Article |
Language | English |
Published |
29.04.2024
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Subjects | |
Online Access | Get full text |
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Summary: | The mobility of emerging (e.g., two-dimensional, oxide, organic)
semiconductors is commonly estimated from transistor current-voltage
measurements. However, such devices often experience contact gating, i.e.,
electric fields from the gate modulate the contact resistance during
measurements, which can lead conventional extraction techniques to estimate
mobility incorrectly even by a factor >2. This error can be minimized by
measuring transistors at high gate-source bias, |$V_\mathrm{gs}$|, but this
regime is often inaccessible in emerging devices that suffer from high contact
resistance or early gate dielectric breakdown. Here, we propose a method of
extracting mobility in transistors with gate-dependent contact resistance that
does not require operation at high |$V_\mathrm{gs}$|, enabling accurate
mobility extraction even in emerging transistors with strong contact gating.
Our approach relies on updating the transfer length method (TLM) and can
achieve <10% error even in regimes where conventional techniques overestimate
mobility by >2$\times$. |
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DOI: | 10.48550/arxiv.2404.19022 |