First principles investigation of high thermal conductivity in hexagonal boron phosphide
Designing and searching for high lattice thermal conductivity materials in both bulk and nanoscale level is highly demanding for electronics cooling. Boron phosphide is a III-V compound semiconductor with superior structural and thermal properties. In this work, we studied the lattice thermal conduc...
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Main Authors | , , , |
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Format | Journal Article |
Language | English |
Published |
23.01.2022
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Subjects | |
Online Access | Get full text |
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Summary: | Designing and searching for high lattice thermal conductivity materials in
both bulk and nanoscale level is highly demanding for electronics cooling.
Boron phosphide is a III-V compound semiconductor with superior structural and
thermal properties. In this work, we studied the lattice thermal conductivity
of hexagonal boron phosphide(h-BP) using first principles calculations. For
pure h-BP, we found a high lattice thermal conductivity (at 300K) of 561.2
Wm-1K-1 and 427.4 Wm-1K-1 along a-axis and c-axis respectively. These values
are almost equal to hexagonal silicon carbide(2H-SiC) and cubic boron
phosphide(c-BP). We also computed the length dependence thermal conductivity
for its applications in nanostructures. At nanoscale (L=100 nm), a high thermal
conductivity of ~71.5 Wm-1K-1(56.2 Wm-1K-1) is observed along a-axis(c-axis).
This result suggests that, h-BP will be a promising material for thermal
management applications in micro/nano electronics. |
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DOI: | 10.48550/arxiv.2201.09430 |