Spin-Relaxation Mechanisms in InAs Quantum Well Heterostructures

The spin-orbit interaction and spin-relaxation mechanisms of a shallow InAs quantum well heterostructure are investigated by magnetoconductance measurements as a function of an applied top-gate voltage. The data were fit using the Iordanskii--Lyanda-Geller--Pikus model and two distinct transport reg...

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Main Authors Witt, J. D. S, Pauka, S. J, Gardner, G. C, Gronin, S, Wang, T, Thomas, C, Manfra, M. J, Reilly, D. J, Cassidy, M. C
Format Journal Article
LanguageEnglish
Published 30.11.2021
Subjects
Physics - Mesoscale and Nanoscale Physics
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Summary:The spin-orbit interaction and spin-relaxation mechanisms of a shallow InAs quantum well heterostructure are investigated by magnetoconductance measurements as a function of an applied top-gate voltage. The data were fit using the Iordanskii--Lyanda-Geller--Pikus model and two distinct transport regimes were identified which correspond to the first and second sub-bands of the quantum well. The spin-orbit interaction splitting energy is extracted from the fits to the data, which also displays two distinct regimes. The different sub-band regimes exhibit different spin-scattering mechanisms, the identification of which, is of relevance for device platforms of reduced dimensionality which utilise the spin-orbit interaction.
DOI:10.48550/arxiv.2111.15170