Two-step flux synthesis of ultrapure transition metal dichalcogenides
Here, we describe synthesis of TMD crystals using a two-step flux growth method that eliminates a major potential source of contamination. Detailed characterization of TMDs grown by this two-step method reveals charged and isovalent defects with densities an order of magnitude lower than in TMDs gro...
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Main Authors | , , , , , , , , , , , , |
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Format | Journal Article |
Language | English |
Published |
28.03.2023
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Subjects | |
Online Access | Get full text |
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Summary: | Here, we describe synthesis of TMD crystals using a two-step flux growth
method that eliminates a major potential source of contamination. Detailed
characterization of TMDs grown by this two-step method reveals charged and
isovalent defects with densities an order of magnitude lower than in TMDs grown
by a single-step flux technique. Initial temperature-dependent electrical
transport measurements of monolayer WSe2 yield room-temperature hole mobility
above 840 cm2/Vs and low-temperature disorder-limited mobility above 44,000
cm2/Vs. Electrical transport measurements of graphene-WSe2 heterostructures
fabricated from the two-step flux grown WSe2 also show superior performance:
higher graphene mobility, lower charged impurity density, and well-resolved
integer quantum Hall states. |
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DOI: | 10.48550/arxiv.2303.16290 |