Hopping Conduction in Mn Ion-Implanted GaAs Nanowires

• Published in: Nano letters Vol. 12; no. 9; pp. 4838 - 4842
• Main Authors: Paschoal, Waldomiro, Kumar, Sandeep, Borschel, Christian, Wu, Phillip, Canali, Carlo M, Ronning, Carsten, Samuelson, Lars, Pettersson, Håkan
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 12.09.2012
• Subjects: Arsenicals - chemistry; Charge transport; Condensed Matter Physics; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Crossovers; Electric Conductivity; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electron Transport; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in multilayers, nanoscale materials and structures; Engineering and Technology; Exact sciences and technology; Gallium - chemistry; Gallium arsenide; Gallium arsenides; GaMnAs; Hopping (conductivity); ion-implantation; Kondenserade materians fysik; Manganese; Manganese - chemistry; Materials science; Materials Testing; Mott hopping; Nano Technology; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; Nanostructure; Nanostructures - chemistry; Nanostructures - ultrastructure; Nanoteknik; Nanowires; Physics; Quantum wires; self-assembly; spintronics; Teknik; Temperature; Thermal Conductivity; Transport; self-assembly; spintronics; ion-implantation; Mott hopping; nanowires; GaMnAs; Temperature dependence; Gallium arsenides; Electronic properties; Electrical conductivity; Doping; Charge transport; III-V compound; Hopping conduction; Electric field effects; High field; Nanowires; Nanostructured materials; III-V semiconductors
• ISSN: 1530-6984; 1530-6992; 1530-6992
• DOI: 10.1021/nl302318f

We report on temperature-dependent charge transport in heavily doped Mn+-implanted GaAs nanowires. The results clearly demonstrate that the transport is governed by temperature-dependent hopping processes, with a crossover between nearest neighbor hopping and Mott variable range hopping at about 180 K. From detailed analysis, we have extracted characteristic hopping energies and corresponding hopping lengths. At low temperatures, a strongly nonlinear conductivity is observed which reflects a modified hopping process driven by the high electric field at large bias.