Prospects for Tin-Containing Halide Perovskite Photovoltaics

• Published in: Precision Chemistry Vol. 1; no. 2; pp. 69 - 82
• Main Authors: Hu, Shuaifeng, Smith, Joel A., Snaith, Henry J., Wakamiya, Atsushi
• Format: Journal Article
• Language: English
• Published: United States University of Science and Technology of China and American Chemical Society 24.04.2023; American Chemical Society
• Subjects: perovskite; surface chemistry; carrier dynamic; tin; crystallization; solar cell; defect passivation
• ISSN: 2771-9316; 2771-9316
• DOI: 10.1021/prechem.3c00018

Tin-containing metal halide perovskites have enormous potential as photovoltaics, both in narrow band gap mixed tin–lead materials for all-perovskite tandems and for lead-free perovskites. The introduction of Sn­(II), however, has significant effects on the solution chemistry, crystallization, defect states, and other material properties in halide perovskites. In this perspective, we summarize the main hurdles for tin-containing perovskites and highlight successful attempts made by the community to overcome them. We discuss important research directions for the development of these materials and propose some approaches to achieve a unified understanding of Sn incorporation. We particularly focus on the discussion of charge carrier dynamics and nonradiative losses at the interfaces between perovskite and charge extraction layers in p-i-n cells. We hope these insights will aid the community to accelerate the development of high-performance, stable single-junction tin-containing perovskite solar cells and all-perovskite tandems.