Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials

• Format: eBook
• Language: English
• Published: Basel MDPI - Multidisciplinary Digital Publishing Institute 2024
• Subjects: 3C-SiC; 4H-SiC; a-SiC; activated carbon; aluminum gallium nitride; aluminum nitride; ammonothermal; amorphous; Astronomy, space and time; atomic force microscopy; biomedical; buoyancy; capacitance-voltage characteristics; charge trap states; chemical vapor deposition; coherent optical processes; compliant substrate; computational fluid dynamics; conformal epitaxy; conjugated heat transfer; counting efficiency; crystal; crystal growth; crystallization; current-voltage characteristics; deep levels; degradation; deterministic ion implantation; dislocations; electrical properties; electrochemically exfoliated graphene; electron effective mass; electrons; epitaxial; epitaxy; exciton recombination; fast joule heating; free charge carriers; gallium nitride; GaN; gas voids; graphene; graphitization; group-III nitrides; H2S sensor; HEMT; high-electron-mobility transistor; high-pressure technology; HTL layer; hybrid perovskite; hydrothermal; in situ monitoring; integrated devices; laser annealing; laser beam intensity control; light diffraction; light scattering; Mathematics and Science; membrane sensor; micro-Raman spectroscopy; mildly oxidized graphene; natural convection; nematic liquid crystals; nitrides; numerical simulation; optical Hall effect; optical phase grating; passivation; PECVD; protons; quantum well; radiation compensation; Reference, Information and Interdisciplinary subjects; reliability; repetitive UIS; Research and information: general; sapphire ribbons; semiconductors; SiC; SiC MOSFET; silicon; silicon carbide; sol-gel; solubility; solvothermal; spatial resolution; specific surface area; stacking faults; supercritical fluid; synchrotron radiation imaging; synthesis; terahertz; terrace-stepped relief; thermal treatment; thermal treatments; time-resolved photoluminescence spectroscopy; TiO2 nanopowder; transient spectroscopy; TrenchMOSFET; wide-gap semiconductors; X-ray scattering
• ISBN: 9783725827985; 3725827982; 3725827974; 9783725827978
• DOI: 10.3390/books978-3-7258-2797-8

This reprint, entitled "Feature Papers in Electronic Materials Section – Volume 2", is a collection of selected papers recently published in the MDPI journal Materials, focusing on the latest advances in electronic materials and devices in different fields (e.g., power and high-frequency electronics, optoelectronic devices, sensors, etc.). The first part of the volume is dedicated to the most popular wide-bandgap semiconductors (WBG), i.e., silicon carbide (SiC) and gallium nitride (GaN), focusing on specific materials and device technology issues, as well as new applications. The second part of the reprint is a miscellaneous collection of other electronic materials for various applications, including graphene, and other materials for high-frequency devices, solar cells, and sensors.