Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector

We simulated and analyzed a resonant-cavity-enhancedd InGaAs/GaAs quantum dot n-i-n photodiode using Crosslight Apsys package. The resonant cavity has a distributed Bragg reflector (DBR) at one side. Comparing with the conventional photodetectors, the resonant-cavity-enhanced photodiode (RCE-PD) sho...

Full description

Saved in:
Bibliographic Details
Published inAdvances in Condensed Matter Physics Vol. 2015; no. 2015; pp. 859 - 864
Main Authors Wang, W. W., Li, Y. Q., Guo, F. M.
Format Journal Article
LanguageEnglish
Published Cairo, Egypt Hindawi Limiteds 01.01.2015
Hindawi Publishing Corporation
John Wiley & Sons, Inc
Hindawi Limited
Wiley
Subjects
Efficiency
Laboratories
Mirrors
Photodetectors
Quantum dots
Remote sensing
Simulation
United States
Online AccessGet full text

Cover

More Information
Summary:We simulated and analyzed a resonant-cavity-enhancedd InGaAs/GaAs quantum dot n-i-n photodiode using Crosslight Apsys package. The resonant cavity has a distributed Bragg reflector (DBR) at one side. Comparing with the conventional photodetectors, the resonant-cavity-enhanced photodiode (RCE-PD) showed higher detection efficiency, faster response speed, and better wavelength selectivity and spatial orientation selectivity. Our simulation results also showed that when an AlAs layer is inserted into the device structure as a blocking layer, ultralow dark current can be achieved, with dark current densities 0.0034 A/cm at 0 V and 0.026 A/cm at a reverse bias of 2 V. We discussed the mechanism producing the photocurrent at various reverse bias. A high quantum efficiency of 87.9% was achieved at resonant wavelength of 1030 nm with a FWHM of about 3 nm. We also simulated InAs QD RCE-PD to compare with InGaAs QD. At last, the photocapacitance characteristic of the model has been discussed under different frequencies.
ISSN:1687-8108
1687-8124
DOI:10.1155/2015/847510