Electron-Beam Patterning of Polymer Electrolyte Films To Make Multiple Nanoscale Gates for Nanowire Transistors

• Published in: Nano letters Vol. 14; no. 1; pp. 94 - 100
• Main Authors: Carrad, Damon J, Burke, Adam M, Lyttleton, Roman W, Joyce, Hannah J, Tan, Hark Hoe, Jagadish, Chennupati, Storm, Kristian, Linke, Heiner, Samuelson, Lars, Micolich, Adam P
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 08.01.2014
• Subjects: Applied sciences; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electrolytes; electron beam lithography; Electronics; Engineering and Technology; Exact sciences and technology; Gates; Gating and risering; III-V nanowires; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Materials science; Methods of nanofabrication; Molecular electronics, nanoelectronics; Nano Technology; nanoelectronics; Nanoscale materials and structures: fabrication and characterization; Nanoscale pattern formation; Nanoteknik; Nanowires; Oxides; Patterning; Physics; polymer electrolytes; Quantum wires; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Teknik; Transistors; polymer electrolytes; nanoelectronics; electron beam lithography; III−V nanowires; Patterning; Polymer electrolytes; Polymer films; Nanostructures; Polyethylene glycols; Nanoelectronics; Nanometer scale; Electron beams; Nanopatterning; Capacitance; Nanowires; Nanostructured materials; Gates; Nanomaterial synthesis
• ISSN: 1530-6984; 1530-6992; 1530-6992
• DOI: 10.1021/nl403299u

We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO4 polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap, which reduces parasitic effects and enables multiple, independently controllable gates. The method’s simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.