Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled pMOSFETs

We examine the impact of negative bias temperature (NBT) stress on the fluctuations in ID and IG for deeply scaled pMOSFETs and find that the relative high NBT stress triggers IG-RTN and ID-step. Through the analysis of the field dependence of emission constant and the carrier separation measurement...

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Bibliographic Details
Published inAdvances in Condensed Matter Physics Vol. 2015; no. 2015; pp. 473 - 478
Main Authors Yan, Feng, Guo, Qiang, Ji, Xiaoli, Liao, Yiming
Format Journal Article
LanguageEnglish
Published Cairo, Egypt Hindawi Limiteds 01.01.2015
Hindawi Publishing Corporation
John Wiley & Sons, Inc
Hindawi Limited
Subjects
Bias
Charging
Condensed matter physics
Constants
Emission
Emittance
Fluctuation
Metal oxide semiconductors
Stresses
Transformations
United States
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Summary:We examine the impact of negative bias temperature (NBT) stress on the fluctuations in ID and IG for deeply scaled pMOSFETs and find that the relative high NBT stress triggers IG-RTN and ID-step. Through the analysis of the field dependence of emission constant and the carrier separation measurement, it is found that under the relative high NBT stress some traps keep charged state for very long time, as observing step-like behaviors in ID, while other traps emit charged holes to the gate side through TAT process, which originate both ID-step and ID-RTN.
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ISSN:1687-8108
1687-8124
DOI:10.1155/2015/508610