Robust Multicolor Single Photon Emission from Point Defects in Hexagonal Boron Nitride

• Published in: ACS nano Vol. 10; no. 8; pp. 7331 - 7338
• Main Authors: Tran, Toan Trong, Elbadawi, Christopher, Totonjian, Daniel, Lobo, Charlene J, Grosso, Gabriele, Moon, Hyowon, Englund, Dirk R, Ford, Michael J, Aharonovich, Igor, Toth, Milos
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 23.08.2016; American Chemical Society (ACS)
• Subjects: density functional theory; electron beam irradiation; hexagonal boron nitride; NANOSCIENCE AND NANOTECHNOLOGY; point defects; robust; single photon source; point defects; single photon source; robust; electron beam irradiation; hexagonal boron nitride; density functional theory
• ISSN: 1936-0851; 1936-086X
• DOI: 10.1021/acsnano.6b03602

Hexagonal boron nitride (hBN) is an emerging two-dimensional material for quantum photonics owing to its large bandgap and hyperbolic properties. Here we report two approaches for engineering quantum emitters in hBN multilayers using either electron beam irradiation or annealing and characterize their photophysical properties. The defects exhibit a broad range of multicolor room-temperature single photon emissions across the visible and the near-infrared spectral ranges, narrow line widths of sub-10 nm at room temperature, and a short excited-state lifetime, and high brightness. We show that the emitters can be categorized into two general groups, but most likely possess similar crystallographic structure. Remarkably, the emitters are extremely robust and withstand aggressive annealing treatments in oxidizing and reducing environments. Our results constitute a step toward deterministic engineering of single emitters in 2D materials and hold great promise for the use of defects in boron nitride as sources for quantum information processing and nanophotonics.