Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator

• Published in: arXiv.org
• Main Authors: Cui-Zu, Chang, Zhang, Jinsong, Xiao, Feng, Shen, Jie, Zhang, Zuocheng, Guo, Minghua, Kang, Li, Ou, Yunbo, Pang, Wei, Li-Li, Wang, Zhong-Qing Ji, Yang, Feng, Ji, Shuaihua, Chen, Xi, Jia, Jinfeng, Dai, Xi, Zhong Fang, Shou-Cheng, Zhang, He, Ke, Wang, Yayu, Lu, Li, Xu-Cun, Ma, Qi-Kun, Xu
• Format: Paper Journal Article
• Language: English
• Published: Ithaca Cornell University Library, arXiv.org 28.05.2016
• Subjects: Antimony; Bismuth; Electromagnetism; Magnetic fields; Physics - Mesoscale and Nanoscale Physics; Power consumption; Quantum Hall effect; Thin films; Topological insulators; Topology
• ISSN: 2331-8422
• DOI: 10.48550/arxiv.1605.08829

The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of Cr-doped (Bi,Sb)2Te3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e^2,accompanied by a considerable drop of the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes whereas the Hall resistance remains at the quantized value. The realization of the QAH effect may lead to the development of low-power-consumption electronics.