Stabilizing an individual charge fluctuator in a Si/SiGe quantum dot

Charge noise is a major obstacle to improved gate fidelities in silicon spin qubits. Numerous methods exist to mitigate charge noise, including improving device fabrication, dynamical decoupling, and real-time parameter estimation. In this work, we demonstrate a new class of techniques to mitigate c...

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Bibliographic Details
Published inarXiv.org
Main Authors Ye, Feiyang, Ellaboudy, Ammar, Nichol, John M
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 07.07.2024
Subjects
Control methods
Decoupling
Parameter estimation
Physics - Mesoscale and Nanoscale Physics
Physics - Quantum Physics
Quantum dots
Qubits (quantum computing)
Real time
Silicon germanides
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Summary:Charge noise is a major obstacle to improved gate fidelities in silicon spin qubits. Numerous methods exist to mitigate charge noise, including improving device fabrication, dynamical decoupling, and real-time parameter estimation. In this work, we demonstrate a new class of techniques to mitigate charge noise in semiconductor quantum dots by controlling the noise sources themselves. Using two different classical feedback methods, we stabilize an individual charged two-level fluctuator in a Si/SiGe quantum dot. These control methods reduce the low-frequency component of the noise power spectrum by an order of magnitude. These techniques also enable stabilizing the fluctuator in either of its states. In the future, such techniques may enable improved coherence times in quantum-dot spin qubits.
ISSN:2331-8422
DOI:10.48550/arxiv.2407.05439