Effect of resonant impurity scattering of carriers on Drude peak broadening in uniaxially strained graphene

An explanation is proposed for the recently observed in optical spectra of monolayer graphene giant increase in the Drude peak width under applied uniaxial strain. We argue that the underlying mechanism of this increase can be based on resonant scattering of carriers from inevitably present impuriti...

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Bibliographic Details
Published inarXiv.org
Main Authors Shubnyi, V O, Skrypnyk, Y V, Sharapov, S G, Loktev, V M
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 19.06.2019
Subjects
Adatoms
Born approximation
Far infrared radiation
Graphene
Impurities
Physics - Disordered Systems and Neural Networks
Physics - Mesoscale and Nanoscale Physics
Resonance scattering
Strain
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Summary:An explanation is proposed for the recently observed in optical spectra of monolayer graphene giant increase in the Drude peak width under applied uniaxial strain. We argue that the underlying mechanism of this increase can be based on resonant scattering of carriers from inevitably present impurities such as adsorbed atoms that can be described by the Fano-Anderson model. We demonstrate that the often neglected scalar deformation potential plays the essential role in this process. The conditions necessary for the maximum effect of the giant Drude peak broadening are determined. It is stressed that the effect is strongly enhanced when the Fermi level gets closer to the Dirac point. Our theoretical analysis provides guidelines for functionalizing graphene samples in a way that would allow to modulate efficiently the Drude peak width by the applied strain.
ISSN:2331-8422
DOI:10.48550/arxiv.1903.10363