Single-photon emitters in hexagonal boron nitride: a review of progress

• Published in: Reports on progress in physics Vol. 83; no. 4; p. 044501
• Main Authors: Sajid, A, Ford, Michael J, Reimers, Jeffrey R
• Format: Journal Article Paper
• Language: English
• Published: England IOP Publishing 01.04.2020; Cornell University Library, arXiv.org
• Subjects: 2D nanophotonics; Boron nitride; computational approaches; Couplings; defects for quantum technologies; DFT and; Emitters; Emitters (electron); hexagonal boron nitride; Mathematical analysis; ODMR from defect in 2D materials; Organic chemistry; Phonons; Photons; Physics - Materials Science; Properties (attributes); semiconductor defects; single photon emission from 2D materials
• ISSN: 0034-4885; 1361-6633; 2331-8422
• DOI: 10.1088/1361-6633/ab6310

This report summarizes progress made in understanding properties such as zero-phonon-line energies, emission and absorption polarizations, electron-phonon couplings, strain tuning and hyperfine coupling of single photon emitters in hexagonal boron nitride. The primary aims of this research are to discover the chemical nature of the emitting centres and to facilitate deployment in device applications. Critical analyses of the experimental literature and data interpretation, as well as theoretical approaches used to predict properties, are made. In particular, computational and theoretical limitations and challenges are discussed, with a range of suggestions made to overcome these limitations, striving to achieve realistic predictions concerning the nature of emitting centers. A symbiotic relationship is required in which calculations focus on properties that can easily be measured, whilst experiments deliver results in a form facilitating mass-produced calculations.