Resistance minimum and electrical conduction mechanism in polycrystalline CoFeB thin films

The temperature dependent resistance \(R\)(\(T\)) of polycrystalline ferromagnetic CoFeB thin films of varying thickness are analyzed considering various electrical scattering processes. We observe a resistance minimum in \(R\)(\(T\)) curves below \(\simeq\) 29 K, which can be explained as an effect...

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Bibliographic Details
Published inarXiv.org
Main Authors Swamy, G Venkat, Rout, P K, Singh, Manju, Rakshit, R K
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 26.10.2015
Subjects
Electrical conduction
Ferromagnetic materials
Film thickness
Physics - Materials Science
Physics - Mesoscale and Nanoscale Physics
Polycrystals
Scattering
Temperature dependence
Thin films
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Summary:The temperature dependent resistance \(R\)(\(T\)) of polycrystalline ferromagnetic CoFeB thin films of varying thickness are analyzed considering various electrical scattering processes. We observe a resistance minimum in \(R\)(\(T\)) curves below \(\simeq\) 29 K, which can be explained as an effect of intergranular Coulomb interaction in a granular system. The structural and Coulomb interaction related scattering processes contribute more as the film thickness decreases implying the role of disorder and granularity. Although the magnetic contribution to the resistance is the weakest compared to these two, it is the only thickness independent process. On the contrary, the negative coefficient of resistance can be explained by electron interaction effect in disordered amorphous films.
ISSN:2331-8422
DOI:10.48550/arxiv.1505.05711