Quantum Enhanced Josephson Junction Field-Effect Transistors for Logic Applications

• Published in: arXiv.org
• Main Authors: Pan, W, Muhowski, A J, Martinez, W M, Sovinec, C L H, Mendez, J P, Mamaluy, D, W Yu, Shi, X, Sapkota, K, Hawkins, S D, Klem, J F
• Format: Paper Journal Article
• Language: English
• Published: Ithaca Cornell University Library, arXiv.org 27.09.2024
• Subjects: Bias; Critical current (superconductivity); Energy gap; Field effect transistors; Heterostructures; Josephson junctions; Logic; Phase transitions; Physics - Materials Science; Physics - Mesoscale and Nanoscale Physics; Physics - Superconductivity; Semiconductor devices; Superconductivity
• ISSN: 2331-8422
• DOI: 10.48550/arxiv.2409.19137

Josephson junction field-effect transistors (JJFETs) have recently re-emerged as promising candidates for superconducting computing. For JJFETs to perform Boolean logic operations, the so-called gain factor \(\alpha_{R}\) must be larger than 1. In a conventional JJFET made with a classical channel material, due to a gradual dependence of superconducting critical current on the gate bias, \(\alpha_{R}\) is much smaller than 1. In this Letter, we propose a new device structure of quantum enhanced JJFETs in a zero-energy-gap InAs/GaSb heterostructure. We demonstrate that, due to an excitonic insulator quantum phase transition in this zero-gap heterostructure, the superconducting critical current displays a sharp transition as a function of gate bias, and the deduced gain factor \(\alpha_{R}\) ~ 0.06 is more than 50 times that (~ 0.001) reported in a classical JJFET. Further optimization may allow achieving a gain factor larger than 1 for logic applications.