SiC Cantilevers For Generating Uniaxial Stress

This paper demonstrates the first beam resonators fabricated from bulk high purity semi-insulating 4H Silicon Carbide wafers (HPSI 4H-SiC). Our innovations include: (1) Multi-level front-side, back-side inductively coupled plasma-deep reactive ion etching (ICP-DRIE) technology to fabricate thin, low...

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Bibliographic Details
Published inarXiv.org
Main Authors Jiang, Boyang, Opondo, Noah, Wolfowicz, Gary, Pen-Li, Yu, Awschalom, David D, Bhave, Sunil A
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 19.11.2019
Subjects
Cantilever beams
Inductively coupled plasma
Physics - Applied Physics
Physics - Mesoscale and Nanoscale Physics
Q factors
Reactive ion etching
Resonators
Silicon carbide
Silicon substrates
Vibration meters
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Summary:This paper demonstrates the first beam resonators fabricated from bulk high purity semi-insulating 4H Silicon Carbide wafers (HPSI 4H-SiC). Our innovations include: (1) Multi-level front-side, back-side inductively coupled plasma-deep reactive ion etching (ICP-DRIE) technology to fabricate thin, low-mass, bending-mode resonators framed by the SiC substrate (2) Laser Doppler Vibrometer (LDV) measurements of mechanical quality factors (Q) > 10,000 with frequencies ranging from 300 kHz to 8MHz and (3) Calculated uniaxial in-plane surface stress 20 MPa at top surface of resonator base when operating at resonance in vacuum.
ISSN:2331-8422
DOI:10.48550/arxiv.1911.08347