Demonstration of Optical Nonlinearity in InGaAsP/InP Passive Waveguides

• Published in: arXiv.org
• Main Authors: Saeidi, Shayan, Rasekh, Payman, Awan, Kashif M, Alperen Tüğen, Huttunen, Mikko J, Dolgaleva, Ksenia
• Format: Paper Journal Article
• Language: English
• Published: Ithaca Cornell University Library, arXiv.org 05.06.2018
• Subjects: Absorptivity; Four-wave mixing; Gallium indium arsenide phosphide; Indium phosphides; Nonlinearity; Phase modulation; Photon absorption; Photonics; Physics - Optics; Waveguides
• DOI: 10.48550/arxiv.1806.01609

We report on the study of the third-order nonlinear optical interactions in In\(_{x}\)Ga\(_{1-x}\)As\(_{y}\)P\(_{1-y}\)/InP strip-loaded waveguides. The material composition and waveguide structures were optimized for enhanced nonlinear optical interactions. We performed self-phase modulation, four-wave mixing and nonlinear absorption measurements at the pump wavelength 1568 nm in our waveguides. The nonlinear phase shift of up to \(2.5\pi\) has been observed in self-phase modulation experiments. The measured value of the two-photon absorption coefficient \(\alpha_2\) was 15 cm/GW. The four-wave mixing conversion range, representing the wavelength difference between maximally separated signal and idler spectral components, was observed to be 45 nm. Our results indicate that InGaAsP has a high potential as a material platform for nonlinear photonic devices, provided that the operation wavelength range outside the two-photon absorption window is selected.