Demonstration of Optical Nonlinearity in InGaAsP/InP Passive Waveguides

We report on the study of the third-order nonlinear optical interactions in In\(_{x}\)Ga\(_{1-x}\)As\(_{y}\)P\(_{1-y}\)/InP strip-loaded waveguides. The material composition and waveguide structures were optimized for enhanced nonlinear optical interactions. We performed self-phase modulation, four-...

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Bibliographic Details
Published inarXiv.org
Main Authors Saeidi, Shayan, Rasekh, Payman, Awan, Kashif M, Alperen Tüğen, Huttunen, Mikko J, Dolgaleva, Ksenia
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 05.06.2018
Subjects
Absorptivity
Four-wave mixing
Gallium indium arsenide phosphide
Indium phosphides
Nonlinearity
Phase modulation
Photon absorption
Photonics
Physics - Optics
Waveguides
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Summary:We report on the study of the third-order nonlinear optical interactions in In\(_{x}\)Ga\(_{1-x}\)As\(_{y}\)P\(_{1-y}\)/InP strip-loaded waveguides. The material composition and waveguide structures were optimized for enhanced nonlinear optical interactions. We performed self-phase modulation, four-wave mixing and nonlinear absorption measurements at the pump wavelength 1568 nm in our waveguides. The nonlinear phase shift of up to \(2.5\pi\) has been observed in self-phase modulation experiments. The measured value of the two-photon absorption coefficient \(\alpha_2\) was 15 cm/GW. The four-wave mixing conversion range, representing the wavelength difference between maximally separated signal and idler spectral components, was observed to be 45 nm. Our results indicate that InGaAsP has a high potential as a material platform for nonlinear photonic devices, provided that the operation wavelength range outside the two-photon absorption window is selected.
ISSN:2331-8422
DOI:10.48550/arxiv.1806.01609