The role of the short range magnetic correlations on the gap opening of the topological Kondo insulators

In this work we investigate the effects of the short range magnetic correlations on the gap opening of the topological Kondo insulators. We consider an additional narrow band to the otherwise completely localized f-electrons, by adding a term to the periodic Anderson model which allows a small hoppi...

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Bibliographic Details
Published inarXiv.org
Main Authors Ramos, E, Franco, R, Silva-Valencia, J, Foglio, M E, Figueira, M S
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 08.03.2017
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Summary:In this work we investigate the effects of the short range magnetic correlations on the gap opening of the topological Kondo insulators. We consider an additional narrow band to the otherwise completely localized f-electrons, by adding a term to the periodic Anderson model which allows a small hopping of the localized electrons between neighboring sites of the lattice. This new model is adequate to study a novel class of intermetallic 4f and 5f orbitals materials: the Kondo topological insulators, whose paradigmatic material is the compound SmB6. For simplicity, we consider a version of the periodic Anderson model on a two dimensional square lattice. The starting point of the model is the 4f-Ce ions orbitals, with J=5/2 multiplet in the presence of spin-orbit coupling. We present results of the correlation functions and we show that the short range antiferromagnetic correlations favors the formation of magnetic moments on the atoms, and at the same time the existence of these moments opens the possibility of the spin-flip scattering by the conduction electrons, generating the Kondo effect, which contribute to the opening of a gap in the density of states of the system. We also calculate the phase diagram which shows that, as we vary the Ef level position from the empty regime to the Kondo regime, the system develops several phases: metallic, band insulator and Kondo topological insulator. The band structure calculated shows that the model develops a strong topological insulator.
ISSN:2331-8422
DOI:10.48550/arxiv.1604.00422