Stark Tuning of Single-Photon Emitters in Hexagonal Boron Nitride

Single-photon emitters play an essential role in quantum technologies, including quantum computing and quantum communications. Atomic defects in hexagonal boron nitride (h-BN) have recently emerged as new room-temperature single-photon emitters in solid-state systems, but the development of scalable...

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Bibliographic Details
Published inarXiv.org
Main Authors Noh, Gichang, Choi, Daebok, Jin-Hun, Kim, Dong-Gil Im, Yoon-Ho, Kim, Seo, Hosung, Lee, Jieun
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 13.07.2018
Subjects
Boron nitride
Control methods
Defects
Dipole moments
Electric fields
Emissions control
Emitters
First principles
Graphene
Heterostructures
Photon emission
Physics - Applied Physics
Quantum computing
Stability
Stark effect
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Summary:Single-photon emitters play an essential role in quantum technologies, including quantum computing and quantum communications. Atomic defects in hexagonal boron nitride (h-BN) have recently emerged as new room-temperature single-photon emitters in solid-state systems, but the development of scalable and tunable h-BN single-photon emitters requires external methods that can control the emission energy of individual defects. Here, by fabricating van der Waals heterostructures of h-BN and graphene, we demonstrate the electrical control of single-photon emission from atomic defects in h-BN via the Stark effect. By applying an out-of-plane electric field through graphene gates, we observed Stark shifts as large as 5.4 nm per GV/m. The Stark shift generated upon a vertical electric field suggests the existence of out-of-plane dipole moments associated with atomic defect emitters, which is supported by first-principles theoretical calculations. Furthermore, we found field-induced discrete modification and stabilization of emission intensity, which were reversibly controllable with an external electric field.
ISSN:2331-8422
DOI:10.48550/arxiv.1807.04945