Structural defects in MBE-grown CdTe-based heterojunctions for photovoltaic applications

• Published in: arXiv.org
• Main Authors: Wichrowska, Karolina, Wosinski, Tadeusz, Domagala, Jaroslaw Z, Kret, Slawomir, Chusnutdinow, Sergij, Karczewski, Grzegorz
• Format: Paper Journal Article
• Language: English
• Published: Ithaca Cornell University Library, arXiv.org 24.12.2019
• Subjects: Absorbers; Absorption cross sections; Cadmium tellurides; Crystal defects; Current carriers; Deep level transient spectroscopy; Defects; Electrical grounding; Electron states; Energy conversion efficiency; Epitaxial growth; Heterojunctions; Kinetics; Lattice parameters; Lattice vacancies; Misfit dislocations; Molecular beam epitaxy; Photovoltaic cells; Physics - Materials Science; Single crystals; Solar cells; Stacking faults; Substrates; Threading dislocations; Transmission electron microscopy; Zinc tellurides
• ISSN: 2331-8422
• DOI: 10.48550/arxiv.1912.11280

Structural defects in the p-ZnTe/i-CdTe/n-CdTe single-crystalline heterojunctions designed for photovoltaic applications have been investigated by transmission electron microscopy (TEM) and deep-level transient spectroscopy (DLTS). Lattice parameters and misfit strain in the undoped CdTe absorber layers of the heterojunctions, grown by the molecular-beam epitaxy technique on two different substrates, GaAs and CdTe, have been determined with high-resolution X-ray diffractometry. A dense network of misfit dislocations at the lattice-mismatched CdTe/GaAs and ZnTe/CdTe interfaces and numerous threading dislocations and stacking faults have been shown by the cross-sectional TEM imaging of the heterojunctions. The DLTS measurements revealed five deep-level traps in the heterojunctions grown on the GaAs substrates and only three of them in the heterojunctions grown on CdTe. One of the traps, showing the exponential capture kinetics of charge carriers, has been identified as associated with the double acceptor level of Cd vacancies in the CdTe absorber layers. All the other traps have been attributed to the electronic states of extended defects, presumably dislocations, on the grounds of their logarithmic capture kinetics. Two of these traps, displaying the largest values of their capture cross-section and the properties characteristic of bandlike electronic states, have been ascribed to the core states of dislocations. It is argued that they are most likely responsible for decreased lifetime of photo-excited carriers resulting in a low energy conversion efficiency of solar cells based on similarly grown heterojunctions.