Chalcogen Assisted Enhanced Atomic Orbital Interaction at TMDs - Metal Interface & Chalcogen Passivation of TMD Channel For Overall Performance Boost of 2D TMD FETs

• Published in: arXiv.org
• Main Authors: Ansh, Kumar, Jeevesh, Sheoran, Gaurav, Variar, Harsha B, Mishra, Ravi K, Kuruva, Hemanjaneyulu, Meersha, Adil, Mishra, Abhishek, Raghavan, Srinivasan, Shrivastava, Mayank
• Format: Paper Journal Article
• Language: English
• Published: Ithaca Cornell University Library, arXiv.org 08.01.2019
• Subjects: Carrier injection; Charge injection; Charge transport; Contact resistance; Current carriers; Field effect transistors; Molybdenum disulfide; Organic chemistry; Passivity; Physics - Applied Physics; Quantum chemistry; Semiconductor devices; Transition metal compounds; X ray photoelectron spectroscopy
• ISSN: 2331-8422
• DOI: 10.48550/arxiv.1901.02150

Metal-semiconductor interface is a bottleneck for efficient transport of charge carriers through Transition Metal Dichalcogenide (TMD) based field-effect transistors (FETs). Injection of charge carriers across such interfaces is mostly limited by Schottky barrier at the contacts which must be reduced to achieve highly efficient contacts for carrier injection into the channel. Here we introduce a universal approach involving dry chemistry to enhance atomic orbital interaction between various TMDs (MoS2, WS2, MoSe2 and WSe2) & metal contacts has been experimentally demonstrated. Quantum chemistry between TMDs, Chalcogens and metals has been explored using detailed atomistic (DFT & NEGF) simulations, which is then verified using Raman, PL and XPS investigations. Atomistic investigations revealed lower contact resistance due to enhanced orbital interaction and unique physics of charge sharing between constituent atoms in TMDs with introduced Chalcogen atoms which is subsequently validated through experiments. Besides contact engineering, which lowered contact resistance by 72, 86, 1.8, 13 times in MoS2, WS2, MoSe2 and WSe2 respectively, a novel approach to cure / passivate dangling bonds present at the 2D TMD channel surface has been demonstrated. While the contact engineering improved the ON-state performance (ION, gm, mobility and RON) of 2D TMD FETs by orders of magnitude, Chalcogen based channel passivation was found to improve gate control (IOFF, SS, & VTH) significantly. This resulted in an overall performance boost. The engineered TMD FETs were shown to have performance on par with best reported till date.