Bulk inversion asymmetry induced magnetogyrotropic reflection from quantum wells

Bulk inversion asymmetry (BIA) of III-V and II-VI semiconductor quantum wells is demonstrated by reflection experiments in magnetic field oriented in the structure plane. The linear in the magnetic field contribution to the reflection coefficients is measured at oblique incidence of \(s\) and \(p\)...

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Bibliographic Details
Published inarXiv.org
Main Authors Kotova, L V, Kats, V N, Platonov, A V, Kochereshko, V P, André, R, Golub, L E
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 03.11.2018
Subjects
Asymmetry
Field strength
II-VI semiconductors
Light reflection
Magnetic fields
Magnetic resonance
Physics - Mesoscale and Nanoscale Physics
Polarized light
Quantum wells
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Summary:Bulk inversion asymmetry (BIA) of III-V and II-VI semiconductor quantum wells is demonstrated by reflection experiments in magnetic field oriented in the structure plane. The linear in the magnetic field contribution to the reflection coefficients is measured at oblique incidence of \(s\) and \(p\) polarized light in vicinity of exciton resonances. We demonstrate that this contribution to the reflection is caused by magnetogyrotropy of quantum wells, i.e. by the terms in the optical response which are linear in both the magnetic field strength and light wavevector. Theory of magnetogyrotropic effects in light reflection is developed with account for linear in momentum BIA induced terms in the electron and hole effective Hamiltonians. Theoretical estimates agree with the experimental findings. We have found the electron BIA splitting constant in both GaAs and CdTe based quantum wells is about three times smaller than that for heavy holes.
ISSN:2331-8422
DOI:10.48550/arxiv.1811.01214