Electrical Control Grain Dimensionality with Multilevel Magnetic Anisotropy

• Published in: arXiv.org
• Main Authors: Li, Shengyao, Bhatti, Sabpreet, Siew Lang Teo, Lin, Ming, Pan, Xinyue, Yang, Zherui, Song, Peng, Tian, Wanghao, He, Xinyu, Chai, Jianwei, Loh, Xian Jun, Zhu, Qiang, Piramanayagam, S N, Xiao Renshaw Wang
• Format: Paper Journal Article
• Language: English
• Published: Ithaca Cornell University Library, arXiv.org 18.10.2024
• Subjects: Anisotropy; Coercivity; Domain walls; Electric fields; Ferromagnetic materials; Grain size; Magnetic anisotropy; Magnetic thin films; Magnetism; Memory devices; Modulation; Physics - Materials Science; Spintronics; Storage capacity; Thin films; Tuning
• ISSN: 2331-8422
• DOI: 10.48550/arxiv.2405.18256

In alignment with the increasing demand for larger storage capacity and longer data retention, electrical control of magnetic anisotropy has been a research focus in the realm of spintronics. Typically, magnetic anisotropy is determined by grain dimensionality, which is set during the fabrication of magnetic thin films. Despite the intrinsic correlation between magnetic anisotropy and grain dimensionality, there is a lack of experimental evidence for electrically controlling grain dimensionality, thereby impeding the efficiency of magnetic anisotropy modulation. Here, we demonstrate an electric field control of grain dimensionality and prove it as the active mechanism for tuning interfacial magnetism. The reduction in grain dimensionality is associated with a transition from ferromagnetic to superparamagnetic behavior. We achieve a non-volatile and reversible modulation of the coercivity in both the ferromagnetic and superparamagnetic regimes. Subsequent electrical and elemental analysis confirms the variation in grain dimensionality upon the application of gate voltages, revealing a transition from a multidomain to a single-domain state accompanied by a reduction in grain dimensionality. Furthermore, we exploit the influence of grain dimensionality on domain wall motion, extending its applicability to multilevel magnetic memory and synaptic devices. Our results provide a strategy for tuning interfacial magnetism through grain size engineering for advancements in high-performance spintronics.