Analysis of low-threshold optically pumped III-nitride microdisk lasers

Low-threshold lasing under pulsed optical pumping is demonstrated at room temperature for III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range. Thresholds in the range of 18 kW/cm2 have been achieved along with narrow linewidths of 0.07 nm and a large peak to backgrou...

Full description

Saved in:
Bibliographic Details
Published inarXiv.org
Main Authors Tabataba-Vakili, Farsane, Brimont, Christelle, Alloing, Blandine, Damilano, Benjamin, Doyennette, Laetitia, Guillet, Thierry, Moustafa El Kurdi, Chenot, Sébastien, Brändli, Virginie, Frayssinet, Eric, Duboz, Jean-Yves, Semond, Fabrice, Gayral, Bruno, Boucaud, Philippe
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 10.09.2020
Subjects
Gallium nitrides
Lasing
Optical pumping
Physics - Applied Physics
Quantum wells
Room temperature
Thresholds
Online AccessGet full text

Cover

More Information
Summary:Low-threshold lasing under pulsed optical pumping is demonstrated at room temperature for III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range. Thresholds in the range of 18 kW/cm2 have been achieved along with narrow linewidths of 0.07 nm and a large peak to background dynamic of 300. We compare this threshold range with the one that can be calculated using a rate equation model. We show that thresholds in the few kW/cm2 range constitute the best that can be achieved with III-nitride quantum wells at room temperature. The sensitivity of lasing on the fabrication process is also discussed.
ISSN:2331-8422
DOI:10.48550/arxiv.2009.05118