Electric-field noise from thermally-activated fluctuators in a surface ion trap
We probe electric-field noise near the metal surface of an ion trap chip in a previously unexplored high-temperature regime. We observe a non-trivial temperature dependence with the noise amplitude at 1-MHz frequency saturating around 500~K. Measurements of the noise spectrum reveal a \(1/f^{\alpha\...
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Published in | arXiv.org |
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Main Authors | , , , , , , |
Format | Paper Journal Article |
Language | English |
Published |
Ithaca
Cornell University Library, arXiv.org
04.06.2019
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Subjects | |
Online Access | Get full text |
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Summary: | We probe electric-field noise near the metal surface of an ion trap chip in a previously unexplored high-temperature regime. We observe a non-trivial temperature dependence with the noise amplitude at 1-MHz frequency saturating around 500~K. Measurements of the noise spectrum reveal a \(1/f^{\alpha\approx1}\)-dependence and a small decrease in \(\alpha\) between low and high temperatures. This behavior can be explained by considering noise from a distribution of thermally-activated two-level fluctuators with activation energies between 0.35~eV and 0.65~eV. Processes in this energy range may be relevant to understanding electric-field noise in ion traps; for example defect motion in the solid state and surface adsorbate binding energies. Studying these processes may aid in identifying the origin of excess electric-field noise in ion traps -- a major source of ion motional decoherence limiting the performance of surface traps as quantum devices. |
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ISSN: | 2331-8422 |
DOI: | 10.48550/arxiv.1809.05624 |