Radio frequency reflectometry in silicon-based quantum dots

RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two m...

Full description

Saved in:
Bibliographic Details
Published inarXiv.org
Main Authors Y -Y Liu, Philips, S G J, Orona, L A, Samkharadze, N, McJunkin, T, MacQuarrie, E R, Eriksson, M A, Vandersypen, L M K, Yacoby, A
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 07.01.2021
Subjects
Capacitance
Parasitics (electronics)
Physics - Mesoscale and Nanoscale Physics
Physics - Quantum Physics
Quantum dots
Reflectometry
Silicon
Online AccessGet full text

Cover

More Information
Summary:RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a second by off-chip changes. We demonstrate that these methods enable high-performance charge readout in Si/SiGe quantum dots, achieving a fidelity of 99.9% for a measurement time of 1 \(\mu\)s.
ISSN:2331-8422
DOI:10.48550/arxiv.2012.14560