Impact of strain on the excitonic linewidth in transition metal dichalcogenides

Monolayer transition metal dichalcogenides (TMDs) are known to be highly sensitive to externally applied tensile or compressive strain. In particular, strain can be exploited as a tool to control the optical response of TMDs. However, the role of excitonic effects under strain has not been fully und...

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Bibliographic Details
Published inarXiv.org
Main Authors Khatibi, Zahra, Feierabend, Maja, Selig, Malte, Brem, Samuel, Linderälv, Christopher, Erhart, Paul, Malic, Ermin
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 19.06.2018
Subjects
Chalcogenides
Compressive properties
First principles
Physics - Mesoscale and Nanoscale Physics
Transition metal compounds
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Summary:Monolayer transition metal dichalcogenides (TMDs) are known to be highly sensitive to externally applied tensile or compressive strain. In particular, strain can be exploited as a tool to control the optical response of TMDs. However, the role of excitonic effects under strain has not been fully understood yet. Utilizing the strain-induced modification of electron and phonon dispersion obtained by first principle calculations, we present in this work microscopic insights into the strain-dependent optical response of various TMD materials. In particular, we explain recent experiments on the change of excitonic linewidths in strained TMDs and predict their behavior for tensile and compressive strain at low temperatures.
ISSN:2331-8422
DOI:10.48550/arxiv.1806.07315