High-speed modulator with interleaved junctions in zero-change CMOS photonics

A microring depletion modulator is demonstrated with T-shaped lateral p-n junctions used to realize efficient modulation while maximizing the RC limited bandwidth. The device having a 3 dB bandwidth of 13 GHz has been fabricated in a standard 45 nm microelectronics CMOS process. The cavity has a lin...

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Bibliographic Details
Published inarXiv.org
Main Authors Alloatti, Luca, Dinis Cheian, Ram, Rajeev Jagga
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 29.03.2016
Subjects
CMOS
Depletion
P-n junctions
Photonics
Physics - Optics
T shape
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Summary:A microring depletion modulator is demonstrated with T-shaped lateral p-n junctions used to realize efficient modulation while maximizing the RC limited bandwidth. The device having a 3 dB bandwidth of 13 GHz has been fabricated in a standard 45 nm microelectronics CMOS process. The cavity has a linewidth of 17 GHz and an average wavelength-shift of 9 pm/V in reverse-bias conditions.
ISSN:2331-8422
DOI:10.48550/arxiv.1601.05046