A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current

Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V) and current (>1.8 A/mm) for >17.5 hours exhibiting only a slig...

Full description

Saved in:
Bibliographic Details
Published inActive and Passive Electronic Components Vol. 2012; no. 2012; pp. 82 - 85
Main Authors Christiansen, Bradley D., Heller, Eric R., Coutu, Ronald A., Vetury, Ramakrishna, Shealy, Jeffrey B.
Format Journal Article
LanguageEnglish
Published Cairo, Egypt Hindawi Limiteds 01.01.2012
Hindawi Puplishing Corporation
Hindawi Publishing Corporation
Hindawi Limited
Wiley
Subjects
Armed forces
Bias
Diodes
Drains
Failure analysis
Field programmable gate arrays
Gallium nitrides
Gates
High electron mobility transistors
Semiconductor devices
Voltage
Online AccessGet full text

Cover

More Information
Summary:Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V) and current (>1.8 A/mm) for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0882-7516
1563-5031
DOI:10.1155/2012/493239