Surface passivation and oxide encapsulation to improve optical properties of a single GaAs quantum dot close to the surface

Epitaxial GaAs quantum dots grown by droplet etching have recently shown excellent properties as sources of single photons as well as entangled photon pairs. Integration in some nanophotonic structures requires surface-to-dot distances of less than 100 nm. This demands a surface passivation scheme,...

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Bibliographic Details
Published inarXiv.org
Main Authors Manna, Santanu, Huang, Huiying, Saimon Filipe Covre da Silva, Schimpf, Christian, Rota, Michele B, Lehner, Barbara, Reindl, Marcus, Trotta, Rinaldo, Rastelli, Armando
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 05.02.2022
Subjects
Encapsulation
Epitaxial growth
Gallium arsenide
Optical properties
Passivity
Photoluminescence
Photons
Physics - Applied Physics
Physics - Quantum Physics
Quantum dots
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Summary:Epitaxial GaAs quantum dots grown by droplet etching have recently shown excellent properties as sources of single photons as well as entangled photon pairs. Integration in some nanophotonic structures requires surface-to-dot distances of less than 100 nm. This demands a surface passivation scheme, which could be useful to lower the density of surface states. To address this issue, sulphur passivation with dielectric overlayer as an encapsulation is used for surface to QD distances of 40 nm, which results in the partial recovery of emission linewidths to bulk values as well as in the increase of the photoluminescence intensity.
ISSN:2331-8422
DOI:10.48550/arxiv.2202.02655