Substitutional mechanism for growth of hexagonal boron nitride on epitaxial graphene

Monolayer-thick hexagonal boron nitride (h-BN) is grown on graphene on SiC(0001), by exposure of the graphene to borazine, (BH)3(NH)3, at 1100 C. The h-BN films form ~2-micrometer size grains with a preferred orientation of 30 degrees relative to the surface graphene. Low-energy electron microscopy...

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Bibliographic Details
Published inarXiv.org
Main Authors Mende, Patrick C, Li, Jun, Feenstra, Randall M
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 06.07.2018
Subjects
Boron nitride
Epitaxial growth
Grains
Graphene
Physics - Mesoscale and Nanoscale Physics
Preferred orientation
Silicones
Substitutes
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Summary:Monolayer-thick hexagonal boron nitride (h-BN) is grown on graphene on SiC(0001), by exposure of the graphene to borazine, (BH)3(NH)3, at 1100 C. The h-BN films form ~2-micrometer size grains with a preferred orientation of 30 degrees relative to the surface graphene. Low-energy electron microscopy is employed to provide definitive signatures of the number and composition of two-dimensional (2D) planes across the surface. These grains are found to form by substitution for the surface graphene, with the C atoms produced by this substitution then being incorporated below the h-BN (at the interface between the existing graphene and the SiC) to form a new graphene plane.
ISSN:2331-8422
DOI:10.48550/arxiv.1807.02539