How valley-orbit states in silicon quantum dots probe quantum well interfaces

The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and two-electron valley-orbit state energies as the dot potential is m...

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Bibliographic Details
Published inarXiv.org
Main Authors Dodson, J P, Ercan, H Ekmel, Corrigan, J, Losert, Merritt, Holman, Nathan, McJunkin, Thomas, Edge, L F, Friesen, Mark, Coppersmith, S N, Eriksson, M A
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 06.04.2022
Subjects
Configuration interaction
Interface roughness
Mathematical analysis
Physics - Mesoscale and Nanoscale Physics
Physics - Quantum Physics
Quantum dots
Quantum wells
Silicon
Valleys
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Summary:The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and two-electron valley-orbit state energies as the dot potential is modified by changing gate voltages, and we calculate these same energies using full configuration interaction calculations. The results enable an understanding of the interplay between the physical contributions and enable a new probe of the quantum well interface.
ISSN:2331-8422
DOI:10.48550/arxiv.2103.14702