Resonance-enhanced waveguide-coupled silicon-germanium detector

A photodiode with 0.55\(\pm\)0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium (SiGe) within a microring which is compatible wit...

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Bibliographic Details
Published inarXiv.org
Main Authors Alloatti, Luca, Ram, Rajeev Jagga
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 04.01.2016
Subjects
Dark current
Photodiodes
Physics - Optics
Silicon
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Summary:A photodiode with 0.55\(\pm\)0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium (SiGe) within a microring which is compatible with high-performance electronics. A 3 dB bandwidth of 5 GHz at -4 V bias is obtained with a dark current of less than 20 pA.
ISSN:2331-8422
DOI:10.48550/arxiv.1601.00542