Giant plateau in the THz Faraday angle in gated Bi2Se3
We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3 thin films capped with In2Se3. A plateau is observed in the real part of the Faraday angle at an onset gate voltage corresponding to no band bending at the surface which persists into accumulation. The plateau is two orders of...
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Abstract | We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3 thin films capped with In2Se3. A plateau is observed in the real part of the Faraday angle at an onset gate voltage corresponding to no band bending at the surface which persists into accumulation. The plateau is two orders of magnitude flatter than the step size expected from a single Landau Level in the low frequency limit, quantized in units of the fine structure constant. At 8 T, the plateau extends over a range of gate voltage that spans an electron density greater than 14 times the quantum flux density. Both the imaginary part of the Faraday angle and transmission measurements indicate dissipative off-axis and longitudinal conductivity channels associated with the plateau. |
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AbstractList | Phys. Rev. B 86, 235133 (2012) We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3 thin
films capped with In2Se3. A plateau is observed in the real part of the Faraday
angle at an onset gate voltage corresponding to no band bending at the surface
which persists into accumulation. The plateau is two orders of magnitude
flatter than the step size expected from a single Landau Level in the low
frequency limit, quantized in units of the fine structure constant. At 8 T, the
plateau extends over a range of gate voltage that spans an electron density
greater than 14 times the quantum flux density. Both the imaginary part of the
Faraday angle and transmission measurements indicate dissipative off-axis and
longitudinal conductivity channels associated with the plateau. We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3 thin films capped with In2Se3. A plateau is observed in the real part of the Faraday angle at an onset gate voltage corresponding to no band bending at the surface which persists into accumulation. The plateau is two orders of magnitude flatter than the step size expected from a single Landau Level in the low frequency limit, quantized in units of the fine structure constant. At 8 T, the plateau extends over a range of gate voltage that spans an electron density greater than 14 times the quantum flux density. Both the imaginary part of the Faraday angle and transmission measurements indicate dissipative off-axis and longitudinal conductivity channels associated with the plateau. |
Author | Bansal, Namrata Oh, Seongshik Drew, H Dennis Brahlek, Matthew Jenkins, Gregory S Sushkov, Andrei B Schmadel, Don C M -H Kim |
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BackLink | https://doi.org/10.1103/PhysRevB.86.235133$$DView published paper (Access to full text may be restricted) https://doi.org/10.48550/arXiv.1209.1138$$DView paper in arXiv |
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Snippet | We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3 thin films capped with In2Se3. A plateau is observed in the real part of the Faraday... Phys. Rev. B 86, 235133 (2012) We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3 thin films capped with In2Se3. A plateau is observed in... |
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SubjectTerms | Electric potential Electron density Fine structure Flux density Physics - Mesoscale and Nanoscale Physics Physics - Strongly Correlated Electrons Thin films |
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Title | Giant plateau in the THz Faraday angle in gated Bi2Se3 |
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