Giant plateau in the THz Faraday angle in gated Bi2Se3

We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3 thin films capped with In2Se3. A plateau is observed in the real part of the Faraday angle at an onset gate voltage corresponding to no band bending at the surface which persists into accumulation. The plateau is two orders of...

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Main Authors Jenkins, Gregory S, Sushkov, Andrei B, Schmadel, Don C, M -H Kim, Brahlek, Matthew, Bansal, Namrata, Oh, Seongshik, Drew, H Dennis
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LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 10.12.2012
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Abstract We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3 thin films capped with In2Se3. A plateau is observed in the real part of the Faraday angle at an onset gate voltage corresponding to no band bending at the surface which persists into accumulation. The plateau is two orders of magnitude flatter than the step size expected from a single Landau Level in the low frequency limit, quantized in units of the fine structure constant. At 8 T, the plateau extends over a range of gate voltage that spans an electron density greater than 14 times the quantum flux density. Both the imaginary part of the Faraday angle and transmission measurements indicate dissipative off-axis and longitudinal conductivity channels associated with the plateau.
AbstractList Phys. Rev. B 86, 235133 (2012) We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3 thin films capped with In2Se3. A plateau is observed in the real part of the Faraday angle at an onset gate voltage corresponding to no band bending at the surface which persists into accumulation. The plateau is two orders of magnitude flatter than the step size expected from a single Landau Level in the low frequency limit, quantized in units of the fine structure constant. At 8 T, the plateau extends over a range of gate voltage that spans an electron density greater than 14 times the quantum flux density. Both the imaginary part of the Faraday angle and transmission measurements indicate dissipative off-axis and longitudinal conductivity channels associated with the plateau.
We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3 thin films capped with In2Se3. A plateau is observed in the real part of the Faraday angle at an onset gate voltage corresponding to no band bending at the surface which persists into accumulation. The plateau is two orders of magnitude flatter than the step size expected from a single Landau Level in the low frequency limit, quantized in units of the fine structure constant. At 8 T, the plateau extends over a range of gate voltage that spans an electron density greater than 14 times the quantum flux density. Both the imaginary part of the Faraday angle and transmission measurements indicate dissipative off-axis and longitudinal conductivity channels associated with the plateau.
Author Bansal, Namrata
Oh, Seongshik
Drew, H Dennis
Brahlek, Matthew
Jenkins, Gregory S
Sushkov, Andrei B
Schmadel, Don C
M -H Kim
Author_xml – sequence: 1
  givenname: Gregory
  surname: Jenkins
  middlename: S
  fullname: Jenkins, Gregory S
– sequence: 2
  givenname: Andrei
  surname: Sushkov
  middlename: B
  fullname: Sushkov, Andrei B
– sequence: 3
  givenname: Don
  surname: Schmadel
  middlename: C
  fullname: Schmadel, Don C
– sequence: 4
  fullname: M -H Kim
– sequence: 5
  givenname: Matthew
  surname: Brahlek
  fullname: Brahlek, Matthew
– sequence: 6
  givenname: Namrata
  surname: Bansal
  fullname: Bansal, Namrata
– sequence: 7
  givenname: Seongshik
  surname: Oh
  fullname: Oh, Seongshik
– sequence: 8
  givenname: H
  surname: Drew
  middlename: Dennis
  fullname: Drew, H Dennis
BackLink https://doi.org/10.1103/PhysRevB.86.235133$$DView published paper (Access to full text may be restricted)
https://doi.org/10.48550/arXiv.1209.1138$$DView paper in arXiv
BookMark eNotkL9PwzAQhS0EEqV0Z0KWmBPOd3Fij1DRFqkSA9kjJ7FLquCU_EC0fz0JZXrDfTq9792wS994y9idgDBSUsKjaX-q71Ag6FAIUhdshkQiUBHiNVt03R4AME5QSpqxeF0Z3_NDbXprBl553n9Ynm5OfGVaU5ojN35X2-mwG5GSP1f4bumWXTlTd3bxn3OWrl7S5SbYvq1fl0_bwEihg9wqR0A5UQQykoXMYwEkY4USySnnyrFgDoWOZJRbjWALQZYSp2INiDHN2f357Z9TdmirT9Mes8ktm9xG4OEMHNrma7Bdn-2bofVjpQxhWkMnUtMvrcZPXg
ContentType Paper
Journal Article
Copyright 2012. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.
http://arxiv.org/licenses/nonexclusive-distrib/1.0
Copyright_xml – notice: 2012. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.
– notice: http://arxiv.org/licenses/nonexclusive-distrib/1.0
DBID 8FE
8FG
ABJCF
ABUWG
AFKRA
AZQEC
BENPR
BGLVJ
CCPQU
DWQXO
HCIFZ
L6V
M7S
PIMPY
PQEST
PQQKQ
PQUKI
PRINS
PTHSS
GOX
DOI 10.48550/arxiv.1209.1138
DatabaseName ProQuest SciTech Collection
ProQuest Technology Collection
Materials Science & Engineering Collection
ProQuest Central (Alumni)
ProQuest Central
ProQuest Central Essentials
ProQuest Central
Technology Collection
ProQuest One Community College
ProQuest Central Korea
SciTech Premium Collection
ProQuest Engineering Collection
Engineering Database
Publicly Available Content Database
ProQuest One Academic Eastern Edition (DO NOT USE)
ProQuest One Academic
ProQuest One Academic UKI Edition
ProQuest Central China
Engineering Collection
arXiv.org
DatabaseTitle Publicly Available Content Database
Engineering Database
Technology Collection
ProQuest Central Essentials
ProQuest One Academic Eastern Edition
ProQuest Central (Alumni Edition)
SciTech Premium Collection
ProQuest One Community College
ProQuest Technology Collection
ProQuest SciTech Collection
ProQuest Central China
ProQuest Central
ProQuest Engineering Collection
ProQuest One Academic UKI Edition
ProQuest Central Korea
Materials Science & Engineering Collection
ProQuest One Academic
Engineering Collection
DatabaseTitleList
Publicly Available Content Database
Database_xml – sequence: 1
  dbid: GOX
  name: arXiv.org
  url: http://arxiv.org/find
  sourceTypes: Open Access Repository
– sequence: 2
  dbid: 8FG
  name: ProQuest Technology Collection
  url: https://search.proquest.com/technologycollection1
  sourceTypes: Aggregation Database
DeliveryMethod fulltext_linktorsrc
Discipline Physics
EISSN 2331-8422
ExternalDocumentID 1209_1138
Genre Working Paper/Pre-Print
GroupedDBID 8FE
8FG
ABJCF
ABUWG
AFKRA
ALMA_UNASSIGNED_HOLDINGS
AZQEC
BENPR
BGLVJ
CCPQU
DWQXO
FRJ
HCIFZ
L6V
M7S
M~E
PIMPY
PQEST
PQQKQ
PQUKI
PRINS
PTHSS
GOX
ID FETCH-LOGICAL-a519-be8f303b3340545c5b61035682523f8ffd113b0c9454be920ec13e37f86902263
IEDL.DBID BENPR
IngestDate Mon Jan 08 05:42:42 EST 2024
Thu Oct 10 16:45:47 EDT 2024
IsDoiOpenAccess true
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-a519-be8f303b3340545c5b61035682523f8ffd113b0c9454be920ec13e37f86902263
OpenAccessLink https://www.proquest.com/docview/2085509759?pq-origsite=%requestingapplication%
PQID 2085509759
PQPubID 2050157
ParticipantIDs arxiv_primary_1209_1138
proquest_journals_2085509759
PublicationCentury 2000
PublicationDate 20121210
PublicationDateYYYYMMDD 2012-12-10
PublicationDate_xml – month: 12
  year: 2012
  text: 20121210
  day: 10
PublicationDecade 2010
PublicationPlace Ithaca
PublicationPlace_xml – name: Ithaca
PublicationTitle arXiv.org
PublicationYear 2012
Publisher Cornell University Library, arXiv.org
Publisher_xml – name: Cornell University Library, arXiv.org
SSID ssj0002672553
Score 1.5316135
SecondaryResourceType preprint
Snippet We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3 thin films capped with In2Se3. A plateau is observed in the real part of the Faraday...
Phys. Rev. B 86, 235133 (2012) We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3 thin films capped with In2Se3. A plateau is observed in...
SourceID arxiv
proquest
SourceType Open Access Repository
Aggregation Database
SubjectTerms Electric potential
Electron density
Fine structure
Flux density
Physics - Mesoscale and Nanoscale Physics
Physics - Strongly Correlated Electrons
Thin films
SummonAdditionalLinks – databaseName: arXiv.org
  dbid: GOX
  link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwdZ3PS8MwFMcf205eRPHXdGoOXoNdk7TNUcWtCOrBCbuV_JTCKGPrZPrX-9J2XsRrm0D6Tcn3k9fmPYCbxCTMZ9xQZ42iXFhHlfQpVWOmmOImNibEIZ9fkvydP83FvAfXu7MwarUtP9v8wHp9Gw52hqojWR_6cRz-2Jq-ztuPjU0mrq75bzMkzObKn4W1cYvJAex3mEfu2nk5hJ6rjiCZ4lzUZLlAvlMbUlYE6YvM8m8yUStl1RdR1cfChRshuGXJfRm_OXYMs8nj7CGnXd0CqpCHqHaZR2PQjCEMcWGERkRhIsG9WIy6eG9xqDoykguunYwjZ0IoMvWhOBTSEDuBAW793RkQJi36r0HTjSy6TaYz7Oq9c5Kz1GRyCKfN8xbLNjVFEZQoghJDGO0UKLq3cl2EepwICKmQ5_92vIA9ZIKm4Mk4GsGgXm3cJfpura8a9X8AfJh_wA
  priority: 102
  providerName: Cornell University
Title Giant plateau in the THz Faraday angle in gated Bi2Se3
URI https://www.proquest.com/docview/2085509759
https://arxiv.org/abs/1209.1138
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3NS8MwHP3hNgRvfjudIwevcV2Tfp2EybohbA6dsFtJ8yED6Wq3iXrwb_eXrtOD4KXQhkL7Un7v5SXNA7jypc9MyCXVSgrKPaWpiExARZcJJrh0pbQ-5GjsD5_43cybVYbbslpWua2JZaFWC2k98o7NkkRyC7zoJn-lNjXKzq5WERo1aLg4UnDq0Oj1x5OHH5fF9QPUzGwzP1lu3tURxfv87dr-MmrzTEIUpeWVP7W4JJh4HxoTkeviAHZ0dgi75bpMuTwCf4DdtyL5C0pCsSbzjKBgI9PhJ4lFIZT4ICJ7ftG2wfphivTm7qNmxzCN-9PbIa2iDqhACUVTHRrkkpQx1E_ck16KqoZ5Pg7fXITSGIWPmjoy4h5PdeQ6Wlr3MjA2TwoFFDuBerbI9BkQFimkbIk87SgkqDAN8VZjtI44C2QYNeG0fN8k3-xmkVgkEotEE1pbBJLqQ14mv7Cf_998AXuoJcqglK7TgvqqWOtL5OtV2oZaGA_aVdfg2eB-hsfRV_8biMaVXg
link.rule.ids 228,230,783,787,888,12777,21400,27937,33385,33756,43612,43817
linkProvider ProQuest
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1bS8MwGA26Ifrm3enUPPga1zXp7UlQ7KpuQ7DC3kqayxiMrnabqL_eL1mnD4KvDYXmpHzn5ORyELryhU91yARRUnDCPKkIj3RAeJdyyplwhTA-5GDoJ6_sceSNasNtXm-rXNdEW6jlTBiPvGOyJIHcAi-6Kd-ISY0yq6t1hMYmajIKXG1Oise9H4_F9QNQzHS1Ommv7urw6mPyfm0OjJo0kxAkqX3ypxJbeol3UfOZl6raQxuq2EdbdlemmB8gvweDt8DlFAQhX-JJgUGu4TT5wjGvuOSfmBfjqTINxg2T-Hbivih6iNL4Pr1LSB10QDgIKJKrUAOT5JSCemKe8HLQNNTzYfLmApBaS_jU3BER81iuItdRwniXgTZpUiCf6BFqFLNCnSBMIwmELYClHQn0FOYhvKq1UhGjgQijFjq2_c3K1V0WmUEiM0i0UHuNQFb_xvPsF_TT_5sv0XaSDvpZ_2H4dIZ2QFXYyJSu00aNRbVU58Dci_zCDs83mMWTww
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Giant+plateau+in+the+THz+Faraday+angle+in+gated+Bi2Se3&rft.jtitle=arXiv.org&rft.au=Jenkins%2C+Gregory+S&rft.au=Sushkov%2C+Andrei+B&rft.au=Schmadel%2C+Don+C&rft.au=M+-H+Kim&rft.date=2012-12-10&rft.pub=Cornell+University+Library%2C+arXiv.org&rft.eissn=2331-8422&rft_id=info:doi/10.48550%2Farxiv.1209.1138