Giant plateau in the THz Faraday angle in gated Bi2Se3

We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3 thin films capped with In2Se3. A plateau is observed in the real part of the Faraday angle at an onset gate voltage corresponding to no band bending at the surface which persists into accumulation. The plateau is two orders of...

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Bibliographic Details
Published inarXiv.org
Main Authors Jenkins, Gregory S, Sushkov, Andrei B, Schmadel, Don C, M -H Kim, Brahlek, Matthew, Bansal, Namrata, Oh, Seongshik, Drew, H Dennis
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 10.12.2012
Subjects
Electric potential
Electron density
Fine structure
Flux density
Physics - Mesoscale and Nanoscale Physics
Physics - Strongly Correlated Electrons
Thin films
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Summary:We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3 thin films capped with In2Se3. A plateau is observed in the real part of the Faraday angle at an onset gate voltage corresponding to no band bending at the surface which persists into accumulation. The plateau is two orders of magnitude flatter than the step size expected from a single Landau Level in the low frequency limit, quantized in units of the fine structure constant. At 8 T, the plateau extends over a range of gate voltage that spans an electron density greater than 14 times the quantum flux density. Both the imaginary part of the Faraday angle and transmission measurements indicate dissipative off-axis and longitudinal conductivity channels associated with the plateau.
ISSN:2331-8422
DOI:10.48550/arxiv.1209.1138