Magnetotransport Properties of Quasi-Free Standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking

We investigate the magnetotransport properties of quasi-free standing epitaxial graphene bilayer on SiC, grown by atmospheric pressure graphitization in Ar, followed by H\(_2\) intercalation. At the charge neutrality point the longitudinal resistance shows an insulating behavior, which follows a tem...

Full description

Saved in:
Bibliographic Details
Published inarXiv.org
Main Authors Lee, Kayoung, Kim, Seyoung, Points, M S, Beechem, T E, Ohta, Taisuke, Tutuc, E
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 13.08.2011
Subjects
Bilayers
Epitaxial growth
Graphene
Graphitization
Magnetic properties
Physics - Materials Science
Physics - Mesoscale and Nanoscale Physics
Silicon carbide
Stacking
Temperature dependence
Transport properties
Online AccessGet full text

Cover

More Information
Summary:We investigate the magnetotransport properties of quasi-free standing epitaxial graphene bilayer on SiC, grown by atmospheric pressure graphitization in Ar, followed by H\(_2\) intercalation. At the charge neutrality point the longitudinal resistance shows an insulating behavior, which follows a temperature dependence consistent with variable range hopping transport in a gapped state. In a perpendicular magnetic field, we observe quantum Hall states (QHSs) both at filling factors (\(\nu\)) multiple of four (\(\nu=4, 8, 12\)), as well as broken valley symmetry QHSs at \(\nu=0\) and \(\nu=6\). These results unambiguously show that the quasi-free standing graphene bilayer grown on the Si-face of SiC exhibits Bernal stacking.
ISSN:2331-8422
DOI:10.48550/arxiv.1108.2476