Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons

We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. The large area tra...

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Published inACS applied materials & interfaces Vol. 10; no. 12; pp. 9900 - 9903
Main Authors Passi, Vikram, Gahoi, Amit, Senkovskiy, Boris V, Haberer, Danny, Fischer, Felix R, Grüneis, Alexander, Lemme, Max C
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 28.03.2018
Subjects
7-AGNRs
back-gated field-effect transistors
bandgap
graphene nanoribbons
Letter
MATERIALS SCIENCE
mobility
back-gated field-effect transistors
mobility
bandgap
graphene nanoribbons
7-AGNRs
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Summary:We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. The large area transfer process holds the promise of scalable device fabrication with atomically precise nanoribbons. The channels of the FETs are approximately 30 times longer than the average nanoribbon length of 30 nm to 40 nm. The density of the GNRs is high, so that transport can be assumed well-above the percolation threshold. The long channel transistors exhibit a maximum I ON/I OFF current ratio of 87.5.
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USDOE Office of Science (SC), Basic Energy Sciences (BES)
SC0010409; AC02-05CH11231; 648589; NW-1-1-036b
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.8b01116