Electron-Phonon Interactions for Optical Phonon Modes in Few-Layer Graphene

We present a first-principles study of the electron-phonon (e-ph) interactions and their contributions to the linewidths for the optical phonon modes at \(\Gamma\) and K in one to three-layer graphene. It is found that due to the interlayer coupling and the stacking geometry, the high-frequency opti...

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Bibliographic Details
Published inarXiv.org
Main Authors Jia-An, Yan, Ruan, W Y, Chou, M Y
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 20.01.2009
Subjects
Conduction bands
Electron phonon interactions
First principles
Graphene
Interlayers
Multilayers
Phonons
Physics - Materials Science
Physics - Strongly Correlated Electrons
Stacking
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Summary:We present a first-principles study of the electron-phonon (e-ph) interactions and their contributions to the linewidths for the optical phonon modes at \(\Gamma\) and K in one to three-layer graphene. It is found that due to the interlayer coupling and the stacking geometry, the high-frequency optical phonon modes in few-layer graphene couple with different valence and conduction bands, giving rise to different e-ph interaction strengths for these modes. Some of the multilayer optical modes derived from the \(\Gamma\)-\(E_{2g}\) mode of monolayer graphene exhibit slightly higher frequencies and much reduced linewidths. In addition, the linewidths of K-\(A'_1\) related modes in multilayers depend on the stacking pattern and decrease with increasing layer numbers.
ISSN:2331-8422
DOI:10.48550/arxiv.0901.3086