Quasi-bound states and continuum absorption background of polar Al0.5Ga0.5N/GaN quantum dots

• Published in: arXiv.org
• Main Authors: Elmaghraoui, D, Triki, M, Leroux, S Jaziri M, Brault, J
• Format: Paper Journal Article
• Language: English
• Published: Ithaca Cornell University Library, arXiv.org 24.03.2014
• Subjects: Absorption spectra; Computer simulation; Electric fields; Excitation spectra; Mathematical models; Numerical methods; Photoluminescence; Physics - Mesoscale and Nanoscale Physics; Quantum dots; Wetting
• ISSN: 2331-8422
• DOI: 10.48550/arxiv.1403.6141

A theoretical interpretation of the photoluminescence excitation spectra of self-organized polar GaN/(Al,Ga)N quantum dots is proposed. A numerical method assuming a realistic shape of the dots and including the built-in electric field effects is developed to calculate their energy structure and hence their optical absorption. The electron and hole spectra show the existence of a set of quasi-bound states that does not originate from the wetting layer, and plays a crucial role in the observed absorption spectrum of the GaN/(Al,Ga)N dots. Transitions involving these quasi-bound states and wetting layer states give a sufficient explanation for the observed continuum absorption background. The properties of this absorption band, especially its extension, depend strongly on the dot's size. Our simulation provides a natural explanation of the experimental luminescence excitation spectra of ensembles of dots of different heights. Our theoretical model can be extended to cases where the confinement potentials are complicated by the presence of a stronger electric field.