Transport in disordered two-dimensional topological insulator

We study experimentally the transport properties of "inverted" semiconductor HgTe-based quantum well, which is related to the two-dimensional topological insulator, in diffusive transport regime. We perform nonlocal electrical measurements in the absence of the magnetic field and observe l...

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Bibliographic Details
Published inarXiv.org
Main Authors Gusev, G M, Kvon, Z D, Shegai, O A, Mikhailov, N N, Dvoretsky, S A, Portal, J C
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 09.06.2011
Subjects
Electrical measurement
Magnetic fields
Physics - Mesoscale and Nanoscale Physics
Quantum wells
Topological insulators
Transport properties
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Summary:We study experimentally the transport properties of "inverted" semiconductor HgTe-based quantum well, which is related to the two-dimensional topological insulator, in diffusive transport regime. We perform nonlocal electrical measurements in the absence of the magnetic field and observe large signal due to the edge states. It demonstrates, that the edge states can propagate over long distance 1 mm, and, therefore, there is no difference between local and non local electrical measurements in topological insulator. In the presence of the in-plane magnetic field we find strong decrease of the local resistance and complete suppression of the nonlocal resistance. We attribute this observation to the transition between topological insulator and bulk metal induced by the in-plane magnetic field.
ISSN:2331-8422
DOI:10.48550/arxiv.1106.1824