Fabrication and Investigation of Nitrogen doped Ultra-Nano-Crystalline Diamond Hall-bar Devices

Using microwave-assisted plasma chemical vapour deposition (CVD) a layer of Nitrogen doped ultra-nano-crystalline diamond (N-UNCD) is deposited on top of a non-conducting diamond layer, which itself is situated on a Silicon wafer. This structure is then shaped into Hall-bar devices of various dimens...

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Bibliographic Details
Published inarXiv.org
Main Authors Eikenberg, Nina, Kumar, Ganesan, Lee, Kin Kiong, Edmonds, Mark T, Laurens H Willems van Beveren, Prawer, Steven
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 14.03.2013
Subjects
Chemical vapor deposition
Crystal structure
Crystallinity
Diamonds
Dilution
Electrical properties
Nitrogen
Optical properties
Organic chemistry
Physics - Materials Science
Physics - Mesoscale and Nanoscale Physics
Silicon wafers
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Summary:Using microwave-assisted plasma chemical vapour deposition (CVD) a layer of Nitrogen doped ultra-nano-crystalline diamond (N-UNCD) is deposited on top of a non-conducting diamond layer, which itself is situated on a Silicon wafer. This structure is then shaped into Hall-bar devices of various dimensions using optical lithography and dry-etching techniques. The devices' electrical properties are investigated at various temperatures using a cryogen-free dilution refrigerator.
ISSN:2331-8422
DOI:10.48550/arxiv.1303.3326