Pt/Ti/Al2O3/Al tunnel junctions showing electroforming-free bipolar resistive switching behavior

We investigated electroforming-free bipolar resistive switching behavior in Pt/Ti/Al2O3/Al tunnel junctions where the Al2O3 tunnel barrier was naturally formed on Al in air. Various compliance current values for the junction's set switching successfully lead to various resistance values in its...

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Bibliographic Details
Published inarXiv.org
Main Authors Jeong, Doo Seok, Byung-ki Cheong, Kohlstedt, Hermann
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 23.02.2011
Subjects
Alumina-Titanium
Aluminum oxide
Electroforming
Low resistance
Physics - Materials Science
Switching
Titanium
Tunnel junctions
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Summary:We investigated electroforming-free bipolar resistive switching behavior in Pt/Ti/Al2O3/Al tunnel junctions where the Al2O3 tunnel barrier was naturally formed on Al in air. Various compliance current values for the junction's set switching successfully lead to various resistance values in its low resistance state, suggesting the possibility for multi-level-operation. A mechanism for the bipolar switching is qualitatively discussed in terms of the modulation of the tunnel barrier by the reactive Ti layer on top of the barrier.
ISSN:2331-8422
DOI:10.48550/arxiv.1102.4720