Comparison between models of insulator and semiconductor thin films islanding

The synthesis of self-organized quantum dots (QD's) can be achieved through bottom up layer by layer deposition processes as chemical vapor deposition (CVD) or physical vapor deposition (PVD). However, QD's may also be synthesized via sol-gel route, which involves a spontaneous evolution f...

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Bibliographic Details
Published inarXiv.org
Main Authors Lallet, F, Dauger, A, Olivi-Tran, N
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 23.01.2008
Subjects
Chemical vapor deposition
Organic chemistry
Physical vapor deposition
Physics - Materials Science
Physics - Other Condensed Matter
Quantum dots
Roughening
Sol-gel processes
Surface mount technology
Synthesis
Thin films
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Summary:The synthesis of self-organized quantum dots (QD's) can be achieved through bottom up layer by layer deposition processes as chemical vapor deposition (CVD) or physical vapor deposition (PVD). However, QD's may also be synthesized via sol-gel route, which involves a spontaneous evolution from thin films to discrete QD's without further deposition. The aim of the paper is to discuss and compare the physical phenomena involved in QD's formation which initiate from thin film surface roughening between PVD-CVD and sol-gel synthesis approaches. We propose two simple physical models which are relevant to explain the fundamental differences between those methods.
ISSN:2331-8422
DOI:10.48550/arxiv.0801.3619