Spin transport and accumulation in the persistent photoconductor Al\(_{0.3}\)Ga\(_{0.7}\)As

Electrical spin transport and accumulation have been measured in highly Si doped Al0.3Ga0.7As utilizing a lateral spin transport device. Persistent photoconductivity allows for the tuning of the effective carrier density of the channel material in situ via photodoping. Hanle effect measurements are...

Full description

Saved in:
Bibliographic Details
Published inarXiv.org
Main Authors Misuraca, Jennifer, Joon-Il, Kim, Lu, Jun, Meng, Kangkang, Chen, Lin, Yu, Xuezhe, Zhao, Jianhua, Xiong, Peng, Stephan von Molnár
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 23.02.2014
Subjects
Accumulation
Carrier density
Insulators
Metal-insulator transition
Photoconductivity
Physics - Materials Science
Online AccessGet full text

Cover

More Information
Summary:Electrical spin transport and accumulation have been measured in highly Si doped Al0.3Ga0.7As utilizing a lateral spin transport device. Persistent photoconductivity allows for the tuning of the effective carrier density of the channel material in situ via photodoping. Hanle effect measurements are completed at various carrier densities and the measurements yield spin lifetimes on the order of nanoseconds, an order of magnitude smaller than in bulk GaAs. These measurements illustrate that this methodology can be used to obtain a detailed description of how spin lifetimes depend on carrier density in semiconductors across the metal-insulator transition.
ISSN:2331-8422
DOI:10.48550/arxiv.1402.5566