Observation of thermally activated glassiness and memory dip in a-NbSi insulating thin films

We present electrical conductance measurements on amorphous NbSi insulating thin films. These films display out-of equilibrium electronic features that are markedly different from what has been reported so far in disordered insulators. Like in the most studied systems (indium oxide and granular Al f...

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Bibliographic Details
Published inarXiv.org
Main Authors Delahaye, Julien, Grenet, Thierry, Marrache-Kikuchi, C, Bergé, L, Drillien, A A
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 27.06.2014
Subjects
Helium
Indium oxides
Insulators
Liquid helium
Memory devices
MOSFETs
Physics - Disordered Systems and Neural Networks
Physics - Materials Science
Resistance
Temperature dependence
Thin films
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Summary:We present electrical conductance measurements on amorphous NbSi insulating thin films. These films display out-of equilibrium electronic features that are markedly different from what has been reported so far in disordered insulators. Like in the most studied systems (indium oxide and granular Al films), a slow relaxation of the conductance is observed after a quench to liquid helium temperature which gives rise to the growth of a memory dip in MOSFET devices. But unlike in these systems, this memory dip and the related conductance relaxations are still visible up to room temperature, with clear signatures of a temperature dependent dynamics.
ISSN:2331-8422
DOI:10.48550/arxiv.1406.7310