Localization-Delocalization Transition of Indirect Excitons in Lateral Electrostatic Lattices

We study transport of indirect excitons in GaAs/AlGaAs coupled quantum wells in linear lattices created by laterally modulated gate voltage. The localization-delocalization transition (LDT) for transport across the lattice was observed with reducing lattice amplitude or increasing exciton density. T...

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Published inarXiv.org
Main Authors Remeika, M, Graves, J C, Hammack, A T, Meyertholen, A D, Fogler, M M, Butov, L V, Hanson, M, Gossard, A C
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 10.01.2009
Subjects
Amplitudes
Excitons
Lattices
Localization
Percolation
Physics - Mesoscale and Nanoscale Physics
Quantum wells
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Summary:We study transport of indirect excitons in GaAs/AlGaAs coupled quantum wells in linear lattices created by laterally modulated gate voltage. The localization-delocalization transition (LDT) for transport across the lattice was observed with reducing lattice amplitude or increasing exciton density. The exciton interaction energy at the transition is close to the lattice amplitude. These results are consistent with the model, which attributes the LDT to the interaction-induced percolation of the exciton gas through the external potential. We also discuss applications of the lattice potentials for estimating the strength of disorder and exciton interaction.
ISSN:2331-8422
DOI:10.48550/arxiv.0901.1349